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| STD9N10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE ST D9N10 s s s s s s s s V DSS 100 V R DS(on) < 0.27 ID 9A s s TYPICAL RDS(on) = 0.23 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE APPLICATION ORIENTED CHARACTERIZATION THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX "-1") SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX "T4") 3 2 1 1 3 IPAK TO-251 (Suffix "-1") DPAK TO-252 (Suffix "T4") APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s REGULATORS s DC-DC & DC-AC CONVERTERS s MOTOR CONTROL, AUDIO AMPLIFIERS s AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.) INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V DS VDGR V GS ID ID I DM (*) P t ot T stg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 C Drain Current (pulsed) Total Dissipation at T c = 25 C Derating Factor St orage Temperature Max. Operating Junction Temperature o o o Value 100 100 20 9 6 36 45 0.3 -65 to 175 175 Uni t V V V A A A W W/ o C o o C C (*) Pulse width limited by safe operating area March 1996 1/10 STD9N10 THERMAL DATA R t hj-ca se R t hj- amb R thc- si nk Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead T emperature For Soldering Purpose Max Max Typ 3.33 100 1.5 275 o o C/W C/W o C/W o C AVALANCHE CHARACTERISTICS Symb ol I AR E AS E AR I AR Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max, < 1%) Single Pulse Avalanche Energy o (starting Tj = 25 C, ID = I AR , V DD = 25 V) Repetitive Avalanche Energy (pulse width limited by Tj max, < 1%) Avalanche Current, Repetitive or Not-Repetitive o (T c = 100 C, pulse width limited by Tj max, < 1%) Max Valu e 9 30 7 6 Unit A mJ mJ A ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symb ol V (BR)DSS I DSS I GSS Parameter Drain-source Breakdown Voltage Test Cond ition s I D = 250 A VGS = 0 Min. 100 250 1000 100 Typ . Max. Un it V A A nA Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating x 0.8 T c = 125 o C Gate-body Leakage Current (V DS = 0) V GS = 20 V ON () Symb ol V GS(th) R DS( on) ID(o n) Parameter Gate T hreshold Voltage V DS = VGS Static Drain-source On Resistance On State Drain Current V GS = 10V V GS = 10V Test Cond ition s ID = 250 A I D = 4.5 A ID = 4.5 A Tc = 100 oC 9 Min. 2 Typ . 3 0.23 Max. 4 0.27 0.54 Un it V A V DS > I D(on) x R DS(on) max V GS = 10 V DYNAMIC Symb ol g fs () C iss C oss C rss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Cond ition s V DS > I D(on) x R DS(on) max V DS = 25 V f = 1 MHz I D = 4.5 A VGS = 0 Min. 2 Typ . 4 330 90 25 450 120 40 Max. Un it S pF pF pF 2/10 STD9N10 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symb ol t d(on) tr (di/dt) on Parameter Turn-on T ime Rise Time Turn-on Current Slope Test Cond ition s V DD = 50 V ID = 4.5 A VGS = 10 V R G = 4.7 (see test circuit, figure 3) V DD = 80 V ID = 9 A R G = 4.7 V GS = 10 V (see test circuit, figure 5) V DD = 80 V ID = 9 A V GS = 10 V Min. Typ . 10 40 440 Max. 15 60 Un it ns ns A/s Qg Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge 15 6 5 25 nC nC nC SWITCHING OFF Symb ol t r(Vof f) tf tc Parameter Off-voltage Rise Time Fall T ime Cross-over T ime Test Cond ition s V DD = 80 V I D = 9 A R G = 4.7 V GS = 10 V (see test circuit, figure 5) Min. Typ . 15 25 50 Max. 25 35 70 Un it ns ns ns SOURCE DRAIN DIODE Symb ol I SD I SDM (*) V SD () t rr Q rr I RRM Parameter Source-drain Current Source-drain Current (pulsed) Forward O n Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 9 A V GS = 0 80 0.2 5 I SD = 9 A di/dt = 100 A/s o Tj = 150 C V DD = 20 V (see test circuit, figure 5) Test Cond ition s Min. Typ . Max. 9 36 1.5 Un it A A V ns C A () Pulsed: Pulse duration = 300 s, duty cycle 1.5 % (*) Pulse width limited by safe operating area Safe Operating Area Thermal Impedance 3/10 STD9N10 Derating Curve Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage 4/10 STD9N10 Capacitance Variations Normalized Gate Threshold Voltage vs Temperature Normalized On Resistance vs Temperature Turn-on Current Slope Turn-off Drain-source Voltage Slope Cross-over Time 5/10 STD9N10 Switching Safe Operating Area Accidental Overload Area Source-drain Diode Forward Characteristics Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform 6/10 STD9N10 Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And DIode Recovery Times 7/10 STD9N10 TO-251 (IPAK) MECHANICAL DATA DIM. MIN. A A1 A3 B B2 B3 B5 B6 C C2 D E G H L L1 L2 0.45 0.48 6 6.4 4.4 15.9 9 0.8 0.8 0.3 0.95 0.6 0.6 6.2 6.6 4.6 16.3 9.4 1.2 1 0.017 0.019 0.236 0.252 0.173 0.626 0.354 0.031 0.031 2.2 0.9 0.7 0.64 5.2 mm TYP. MAX. 2.4 1.1 1.3 0.9 5.4 0.85 0.012 0.037 0.023 0.023 0.244 0.260 0.181 0.641 0.370 0.047 0.039 MIN. 0.086 0.035 0.027 0.025 0.204 inch TYP. MAX. 0.094 0.043 0.051 0.031 0.212 0.033 H C A C2 L2 D B3 B6 A1 L = = 3 B5 B A3 = B2 = G = E L1 1 2 = 0068771-E 8/10 STD9N10 TO-252 (DPAK) MECHANICAL DATA mm MIN. A A1 A2 B B2 C C2 D E G H L2 L4 0.6 2.2 0.9 0.03 0.64 5.2 0.45 0.48 6 6.4 4.4 9.35 0.8 1 0.023 TYP. MAX. 2.4 1.1 0.23 0.9 5.4 0.6 0.6 6.2 6.6 4.6 10.1 MIN. 0.086 0.035 0.001 0.025 0.204 0.017 0.019 0.236 0.252 0.173 0.368 0.031 0.039 inch TYP. MAX. 0.094 0.043 0.009 0.035 0.212 0.023 0.023 0.244 0.260 0.181 0.397 DIM. H A C2 C DETAIL "A" A1 L2 D DETAIL "A" B = = 3 B2 = = G E 2 L4 1 = = A2 0068772-B 9/10 STD9N10 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersede and replaces all information previously supplied. s SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1995 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ... 10/10 |
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